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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS3638A/D
Switching Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS3638A
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value -25 -25 -25 -4.0 -500 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
CASE 29-04, STYLE 1 TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = -100 mAdc, VBE = 0) Collector - Emitter Sustaining Voltage(2) (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector Cutoff Current (VCE = -15 Vdc, VBE = 0) (VCE = -15 Vdc, VBE = 0, TA = -65C) Emitter Cutoff Current (VEB = -3.0 V, IC = 0) Base Current (VCE = -15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES -- -- IEBO IB -- -- -0.035 -2.0 -35 -0.035 nA -25 -25 -25 -4.0 -- -- -- -- Vdc Vdc Vdc Vdc
mAdc
mAdc
v
v
(Replaces MPS3638/D)
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997
1
MPS3638A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -300 mAdc, VCE = -2.0 Vdc) Collector - Emitter Saturation Voltage (IC = -50 mAdc, IB = -2.5 mAdc) (IC = -300 mAdc, IB = -30 mAdc) Base - Emitter Saturation Voltage (IC = -50 mAdc, IB = -2.5 mAdc) (IC = -300 mAdc, IB = -30 mAdc) hFE 80 100 100 20 VCE(sat) -- -- VBE(sat) -- -0.80 -1.1 -2.0 -0.25 -1.0 Vdc -- -- -- -- Vdc --
SMALL- SIGNAL CHARACTERISTICS
Current - Gain -- Bandwidth Product (VCE = -3.0 Vdc, IC = -50 mAdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = -10 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = -10 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = -10 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Output Admittance (IC = -10 mAdc, VCE = -10 Vdc, f = 1.0 kHz) fT 150 Cobo -- Cibo -- hie -- hre -- hfe 100 hoe -- 1.2 -- mmhos 15 -- 2000 X 10- 4 25 k 10 pF -- pF MHz
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Turn-On Time Turn-Off Time (VCC = -10 Vdc IC = -300 mAdc IB1 = -30 mAdc) Vdc, mAdc, ( (VCC = -10 Vdc, IC = -300 mAdc, , , IB1 = -30 mAdc, IB2 = -30 mAdc) (IC = -300 mAdc, IB1 = -30 mAdc) (IC = -300 mAdc, IB1 = -30 mAdc, IB2 = 30 mAdc) td tr ts tf ton toff -- -- -- -- -- -- 20 70 140 70 75 170 ns ns ns ns ns ns
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
2
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MPS3638A
SWITCHING TIME EQUIVALENT TEST CIRCUIT
- 30 V < 2 ns +2 V 0 1.0 k - 16 V 10 to 100 s, DUTY CYCLE = 2% CS* < 10 pF 200 +14 V 0 1.0 k -16 V 1.0 to 100 s, DUTY CYCLE = 2% CS* < 10 pF < 20 ns - 30 V 200
+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn-On Time
Figure 2. Turn-Off Time
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 10 20 10 7.0 5.0 Ccb
VCC = 30 V IC/IB = 10
QT QA
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)
20
30
200 30 50 70 100 IC, COLLECTOR CURRENT (mA)
300
500
Figure 3. Capacitances
Figure 4. Charge Data
Motorola Small-Signal Transistors, FETs and Diodes Device Data
3
MPS3638A
TRANSIENT CHARACTERISTICS (Continued)
25C 100C
100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10
100 70 50 30 20 VCC = 30 V IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Rise Time
200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 20 IC/IB = 20
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
4
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MPS3638A
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = -10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k NF, NOISE FIGURE (dB) 8
6
6
4
4
IC = 50 A 100 A 500 A 1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0 0.01 0.02 0.05 0.1 0.2
0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS VCE = -10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between selected from the 2N4402 line, and the same units were hfe and other "h" parameters for this series of transistors. To used to develop the correspondingly-numbered curves on obtain these curves, a high-gain and a low-gain unit were each graph.
1000 700 500 hfe , CURRENT GAIN 300 200 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2
100 70 50
2N4402 UNIT 1 2N4402 UNIT 2
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
20 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500
Figure 11. Input Impedance
100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio Motorola Small-Signal Transistors, FETs and Diodes Device Data
Figure 13. Output Admittance 5
MPS3638A
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 - 55C
0.2
0.3
0.5
0.7
1.0
2.0
3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
Figure 14. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 0.8
0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA
0.2
0 0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
1.0 0.8 VOLTAGE (VOLTS)
TJ = 25C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C)
0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2
qVC for VCE(sat)
0.6
VBE(sat) @ VCE = 10 V
0.4
0.2
qVS for VBE
0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500
0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500
Figure 16. "On" Voltages
Figure 17. Temperature Coefficients
6
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MPS3638A
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
A R P
SEATING PLANE
B
F
L K D
XX G H V
1
J
C N N
SECTION X-X
DIM A B C D F G H J K L N P R V
CASE 029-04 (TO-226AA) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
Motorola Small-Signal Transistors, FETs and Diodes Device Data
7
MPS3638A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps
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MPS3638A/D Motorola Small-Signal Transistors, FETs and Diodes Device Data


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